Related references
Note: Only part of the references are listed.An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
Martin Hauck et al.
COMMUNICATIONS PHYSICS (2019)
Hole trapping in SiC-MOS devices evaluated by fast-capacitance-voltage method
Mariko Hayashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
Maria Cabello et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Fabrizio Roccaforte et al.
MICROELECTRONIC ENGINEERING (2018)
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
Thomas Aichinger et al.
MICROELECTRONICS RELIABILITY (2018)
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
Patrick Fiorenza et al.
NANOTECHNOLOGY (2018)
Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors
Peyush Pande et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode
Oriol Avino Salvado et al.
MICROELECTRONICS RELIABILITY (2018)
Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres
Anna Regoutz et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
Takuma Kobayashi et al.
AIP ADVANCES (2017)
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric
Patrick Fiorenza et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model
Xufang Zhang et al.
APPLIED PHYSICS EXPRESS (2017)
Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements
Tetsuo Hatakeyama et al.
APPLIED PHYSICS EXPRESS (2017)
Oxidation induced stress in SiO2/SiC structures
Xiuyan Li et al.
APPLIED PHYSICS LETTERS (2017)
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
Patrick Fiorenza et al.
APPLIED PHYSICS LETTERS (2016)
Structure and chemistry of passivated SiC/SiO2 interfaces
J. Houston Dycus et al.
APPLIED PHYSICS LETTERS (2016)
Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfaces
Patrick Fiorenza et al.
NANOTECHNOLOGY (2016)
Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
Emanuela Schiliro et al.
AIP ADVANCES (2016)
High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2
Xiangyu Yang et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
Viktoryia Uhnevionak et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs
Alberto Salinaro et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Interface Properties of 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOS Structures Annealed in NO
Seiya Nakazawa et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
Hiroshi Yano et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
Aivars J. Lelis et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Material science and device physics in SiC technology for high-voltage power devices
Tsunenobu Kimoto
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
P. Fiorenza et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2014)
Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors
Patrick Fiorenza et al.
APPLIED PHYSICS LETTERS (2014)
High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
Daniel J. Lichtenwalner et al.
APPLIED PHYSICS LETTERS (2014)
Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation
Dai Okamoto et al.
IEEE ELECTRON DEVICE LETTERS (2014)
High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
Aaron Modic et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Challenges for energy efficient wide band gap semiconductor power devices
Fabrizio Roccaforte et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
P. Fiorenza et al.
APPLIED PHYSICS LETTERS (2013)
High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
Y. K. Sharma et al.
IEEE ELECTRON DEVICE LETTERS (2013)
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Patrick Fiorenza et al.
BEILSTEIN JOURNAL OF NANOTECHNOLOGY (2013)
Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing
Hiroshi Yano et al.
SILICON CARBIDE AND RELATED MATERIALS 2012 (2013)
Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3
L. K. Swanson et al.
APPLIED PHYSICS LETTERS (2012)
Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors
Patrick Fiorenza et al.
JOURNAL OF APPLIED PHYSICS (2012)
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
Hironori Yoshioka et al.
JOURNAL OF APPLIED PHYSICS (2012)
Temperature dependence of inversion layer carrier concentration and Hall mobility in 4H-SiC MOSFETs
Sarit Dhar et al.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 (2012)
Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
T. Umeda et al.
APPLIED PHYSICS LETTERS (2011)
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
A. Frazzetto et al.
APPLIED PHYSICS LETTERS (2011)
Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density
R. Kosugi et al.
APPLIED PHYSICS LETTERS (2011)
Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs
John Rozen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals
Fabien Devynck et al.
PHYSICAL REVIEW B (2011)
Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
Dai Okamoto et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Relationship between 4H-SiC/SiO2 transition layer thickness and mobility
T. L. Biggerstaff et al.
APPLIED PHYSICS LETTERS (2009)
Transition layers at the SiO2/SiC interface
Tsvetanka Zheleva et al.
APPLIED PHYSICS LETTERS (2008)
Analysis of anomalous charge-pumping characteristics on 4H-SiC MOSFETs
Dai Okamoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes
Y. Wang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
Koen Martens et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
A. Perez-Tomas et al.
JOURNAL OF APPLIED PHYSICS (2006)
Defect-engineering in SiC by ion implantation and electron irradiation
G Pensl et al.
MICROELECTRONIC ENGINEERING (2006)
Interface passivation for silicon dioxide layers on silicon carbide
S Dhar et al.
MRS BULLETIN (2005)
Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface
CY Lu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor
S Harada et al.
JOURNAL OF APPLIED PHYSICS (2002)
Effects of nitridation in gate oxides grown on 4H-SiC
P Jamet et al.
JOURNAL OF APPLIED PHYSICS (2001)
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung et al.
IEEE ELECTRON DEVICE LETTERS (2001)
Hall mobility and free electron density at the SiC/SiO2 interface in 4H-SiC
NS Saks et al.
APPLIED PHYSICS LETTERS (2000)
Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures
RK Chanana et al.
APPLIED PHYSICS LETTERS (2000)
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
