Velocity saturation in La-doped BaSnO3 thin films

BaSnO3, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining the device performance. We report on the experimental measurement of the electron saturation velocity in La-doped BaSnO3 thin films for a range of doping densities. The predicted saturation velocities based on a simple LO-phonon emission mode, using an effective LO phonon energy of 120meV show good agreement with the measurements of velocity saturation in La-doped BaSnO3 films. Density-dependent saturation velocity in the range of 1.8x10(7)cm/s reducing to 2x10(6)cm/s is predicted for delta-doped BaSnO3 channels with carrier densities ranging from 10(13)cm(-2) to 2x10(14)cm(-2), respectively. These results are expected to aid the informed design of BaSnO3 as an active material for high-charge density electronic transistors. Published under license by AIP Publishing.