Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5100495
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Funding
- National Natural Science Foundation of China [11335006, 11874423]
- Fok Ying Tung Education Foundation
- NSF NNCI Award [1542159]
- PECASE award from the Army Research Office
- China Scholarship Council (CSC) scholarship under the State Scholarship Fund
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In this letter, we report an oxygen-assisted chemical vapor deposition method to synthesize uniform large-area high-quality multilayer hexagonal boron nitride (hBN) films (denoted by O-hBN). Nonvolatile bipolar resistive switching (RS) of resistive random access memories (RRAMs) based on O-hBN films is presented. These RRAMs exhibit enhanced RS performance with lower cycle-to-cycle variability, lower set voltage, and higher current on/off ratio. The enhancement is benefited from the clean and smooth surface of O-hBN films and the reduction of grain boundaries which serve as an energetically favored path for ion migration. This scalable approach to synthesize hBN films could facilitate practical applications of hBN-based RRAMs.
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