4.6 Article

Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

Rate this paper

The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation