Experimental studies on the conduction mechanism and electrical properties of the inverted Ba doped ZnO nanoparticles based memristor

In this study, the determination of the charge carrier conduction in a memristor based on barium doped zinc oxide (Ba0.95ZnO1-x) nanoparticles (NPs) in an indium tin oxide (ITO)/Ba0.95ZnO1-xNP/aluminium (Al) configuration, as well as an explanation of the resistance switching mechanism, was successfully carried out. The ITO/Ba0.95ZnO1-xNP/Al memristor charge carrier conduction was found to be dependent on the bulk charge conduction model of the space charge limited current. Furthermore, comprehensive quantitative analysis of the electrical properties of the memristor, such as the density of the trap states (N-t), capture cross section of trap (sigma(t)), frequency of escape (f), available charge carrier density (n(o)), effective density of states in the conduction band (N-C), maximum of dielectric relaxation time (tau(d)), and charge carrier mobility (mu), was conducted based on the experimental data fitting. The switching behavior was found to be governed by an oxygen vacancy migration, and conducting filaments grow and rupture. The nonideality of the memristance of the ITO/Ba0.95ZnO1-xNP/Al device points to an excellent prospect of its application as an active platform for the development of novel nonlinear memristor based security systems.