Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5116411
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Funding
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project (JST ERATO) [JPMJER1305]
- International Institute for Carbon Neutral Energy Research (WPI-I2CNER) - Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- JSPS KAKENHI [JP15K14149, JP16H04192]
- Canon Foundation
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The material 2-phenylethylammonium tin iodide perovskite (C6H5C2H4NH3)(2)SnI4 [abbreviated as (PEA)(2)SnI4] has shown promising performance as a polycrystalline semiconductor for field-effect transistors (FETs). However, grain boundaries and structural disorder in polycrystalline films limit performance, and so the fundamental upper bounds of the material are yet to be studied. Here, we prepared large crystals of (PEA)(2)SnI4 for FETs and demonstrated carrier mobilities of 40 cm(2) V-1 s(-1) or higher, although with a low fabrication yield (< 1%). Our crystal FETs were very stable when stored in air and when operated under a bias in vacuum. The FET characteristics were superior to those of reported FETs based on polycrystalline perovskite films, and these results contribute to a better understanding of basic carrier transport mechanisms in hybrid perovskite materials.
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