Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5115991
Keywords
-
Categories
Ask authors/readers for more resources
We revisit the mechanism of Poole-Frenkel nonohmic conduction in materials of nonvolatile memory. Percolation theory is shown to explain both the Poole and Frenkel dependencies corresponding to the cases of small and large samples compared to the correlation radii of their percolation clusters, respectively. The applied bias modifies a limited number of microscopic resistances forming the percolation pathways. That understanding opens a pathway to multivalued nonvolatile memory and related neural network applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available