Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab3f4b
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Funding
- CREST of JST [JPMJCR1777]
- Spintronics Research Network of Japan
- JSPS Postdoctoral Fellowship Program [P15362]
- Yazaki Foundation
- [18H05345]
- [16H02095]
- [15H03988]
- [17H04922]
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We present high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (FMS) (In1-x, Fe-x)sb (x = 20%-35%) thin films grown by low temperature MBE. The Curie temperature (T-c) of (In1-x, Fe-x)Sb reaches 385 K at x= 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based FMSs. Moreover, large coercive force (H-c = 160 Oe) and large remanent magnetization (M-r/M-s = 71%) have been observed at low temperature (10 K) for an (In1-x, Fe-x)Sb thin film with x = 35%, indicating that the FMS (In1-x, Fe-x)Sb is very promising for spintronics devices. (C) 2019 The Japan Society of Applied Physics
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