4.8 Article

Chasing the Killer Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors

Journal

ADVANCED MATERIALS
Volume 31, Issue 43, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201902407

Keywords

charge transport; dynamic disorder; field-effect transistors; molecular design; organic electronics; transient localization scenario

Funding

  1. Wiener-Anspach Foundation
  2. Leverhulme Trust (Isaac Newton Trust)
  3. Royal Society (Newton Fellowship) [NF151515]
  4. German Research Foundation [BR4869-1/1]
  5. European Research Council (ERC) [610115]
  6. Engineering and Physical Sciences Research Council (EPSRC) [EP/M005143/1, EP/N022769/1]
  7. EPSRC [EP/L000202]
  8. Belgian National Fund for Scientific Research [2.4565.11]
  9. Walloon Region (WCS) [1117306]
  10. EPSRC Centre for Doctoral Training in Plastic Electronics [EP/G037515/1]
  11. EPSRC [EP/M005143/1, EP/N022769/1] Funding Source: UKRI

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Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a killer phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.

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