Journal
ADVANCED MATERIALS
Volume 31, Issue 39, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201903717
Keywords
cesium lead halide perovskite; distributed feedback lasers; perovskite vertical cavity surface emitting lasers; recrystallization; thermal imprint; thin films
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Funding
- German Federal Ministry for Education and Research [13N13819]
- DFG (Deutsche Forschungsgemeinschaft) [RI1551/9-1]
- European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme [637367]
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy within the Cluster of Excellence PhoenixD [EXC 2122, 390833453]
- DFG [SFB 1249]
- PeroBOOSt project (EFRE)
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Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX3 perovskites can only be achieved with NPs.
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