Journal
ADVANCED MATERIALS
Volume 31, Issue 43, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201904194
Keywords
heterojunctions; Marangoni flow; photodetectors; p-n junctions; transition-metal dichalcogenides
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Funding
- National Research Foundation of Korea [NRF-2015R1A3A2066337]
- Korea Institute of Science and Technology (KIST) institutional program
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Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p-n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W-1 and response speed of 16 mu s. As a feasible application, a WSe2/MoS2-based photodiode array (10 x 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.
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