Journal
ACS NANO
Volume 13, Issue 9, Pages 10085-10094Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b02885
Keywords
cesium lead bromide; perovskite; incommensurate epitaxy; vapor-phase deposition; lasing gallium nitride
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Funding
- National Key Research and Development Program of China [2017YFA0205700, 2017YFA0304600, 2016YFA0200700, 2017YFA0205004]
- National Natural Science Foundation of China [61774003, 61521004, 21673054, 51472080, 11874130, 61574006, 61605073]
- Open Research Fund Program of the State Key Laboratory of Low-dimensional Quantum Physics [KF201706, KF201907]
- Excellent Youth Foundation of Hubei Province [2017CFA038]
- Macau Science and Technology Development Fund [FDCT-116/2016/A3, FDCT-091/2017/A2]
- University of Macau [SRG2016-00087-FST, MYRG2018-00148-IAPME]
- China Postdoctoral Science Foundation [2019M653721]
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Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr3) on c-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr3 microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr3-GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr3. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr3 perovskites.
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