Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 32, Pages 29408-29415Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b08166
Keywords
selector device; threshold switching; crossbar array; resistive switching; nonvolatile memory
Funding
- National Research Foundation of Korea (NRF) - Korean government [2016R1A3B1908249]
- Samsung Semiconductor Research Center in Korea University
- National Research Foundation of Korea [2016R1A3B1908249] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Electrochemical metallization-based threshold switching devices with active metal electrodes have been studied as a selector for high-density resistive random access memory (RRAM) technology in crossbar array architectures. However, these devices are not suitable for integration with three-dimensional (3D) crossbar RRAM arrays due to the difficulty in vertical stacking and/or scaling into the nanometer regime as well as the asymmetric threshold switching behavior and large variation in the operating voltage. Here, we demonstrate bidirectional symmetric threshold switching behaviors from a simple Pt/Ag-doped HfOx/Pt structure. While fabricating the Pt/Ag-doped HfOx/Pt film using a 250 nm hole structure, filaments composed of Ag nanoclusters were constructed through a low-temperature (similar to 200 degrees C) hydrogen annealing process where the shape of the film in a nanoscale via a hole structure was maintained for integration with 3D stackable crossbar RRAM arrays. Finite Ag filament paths in the HfOx layer led to uniform device-to-device performances. Moreover, we observed that the hydrogen annealing process reduced the delay time through the reduction of the oxygen vacancies in the HfOx layer. Consequently, the proposed Pt/Ag-doped HfOx/Pt-based nanoscale selector devices exhibited excellent performance of high selectivity (similar to 10(5)), ultralow OFF current (similar to 10 pA), steep turn-on slope (similar to 2 mV/decade), and short delay time (3 mu s).
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