Journal
ACS OMEGA
Volume 4, Issue 6, Pages 10985-10990Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.9b01027
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Funding
- Impuls- und Vernetzungsfonds of the Helmholtz-Association [VH-NG-423]
- Robert Bosch Stiftung [32.05.8003.0112.0]
- National Natural Science Foundation of China [11804142]
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The chemical and electronic structure of MoO3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 degrees C. Color-coded 2D intensity maps of the Mo 3d and O is and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O is spectra indicate the reduction of MoO3. At moderate temperatures (120-200 degrees C), we find spectral evidence for the formation of Mo5+ and at higher temperatures (>165 degrees C) also of Mo4+ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO3 thin-film properties.
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