Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors

In recent years, photodetectors have very important applications in image sensing, optical communication, fire detection, environmental monitoring, space detection, safety detection, many other scientific research and industrial technology fields, which are regarded as the key components of wearable devices. Due to its great carrier mobility, high absorption coefficient and relatively narrower bandgap engineering, various of photodetector based on 2D group IVA metal chalcogenides, the corresponding ternary alloys and the heterostructures have been reported. Importantly, most of them basically have excellent performance of photodetecting properties, such as large photocurrent, high detectivity, perfect responsivity, high external quantum efficiency, short response and recovery time, broadband photo adsorption and response from ultraviolet to mid infrared range. Moreover, this group of semiconductors is made up of earth-abundant and environmental-friendly elements with prominent chemical stability, which makes them particularly attractive for practical optic electronic applications. Therefore, this concept introduces the recent advances on the materials, synthesis, device fabrication and photodetection mechanism for various of 2D group IVA metal chalcogenides photodetector from an overall perspective. Moreover, challenges and future development trends are discussed. (C) 2019 Elsevier Ltd. All rights reserved.