Related references
Note: Only part of the references are listed.P-type doping of GaN(000(1)over-bar) by magnesium ion implantation
Tetsuo Narita et al.
APPLIED PHYSICS EXPRESS (2017)
A broadband photodetector based on Rhodamine B-sensitized ZnO nanowires film
Zheng Qi Bai et al.
SCIENTIFIC REPORTS (2017)
High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing
Takaki Niwa et al.
APPLIED PHYSICS EXPRESS (2017)
A self-powered ultraviolet photodetector based on solution-processed p-NiO/n-ZnO nanorod array heterojunction
Yanwei Shen et al.
RSC ADVANCES (2015)
3.7 kV Vertical GaN PN Diodes
Isik C. Kizilyalli et al.
IEEE ELECTRON DEVICE LETTERS (2014)
ZnO(N)-Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor
Onkar Game et al.
NANOSCALE (2014)
Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes
Hong-Yu Chen et al.
JOURNAL OF MATERIALS CHEMISTRY C (2014)
A Self-Powered ZnO-Nanorod/CuSCN UV Photodetector Exhibiting Rapid Response
Sabina M. Hatch et al.
ADVANCED MATERIALS (2013)
High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates
Guosheng Wang et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2013)
High Voltage Vertical GaN p-n Diodes With Avalanche Capability
Isik C. Kizilyalli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Eu luminescence center created by Mg codoping in Eu-doped GaN
Dong-gun Lee et al.
APPLIED PHYSICS LETTERS (2012)
Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon
Jaekyun Kim et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN
Feng Xie et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2012)
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
B. N. Feigelson et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p-n Junctions
Ya-Qing Bie et al.
ADVANCED MATERIALS (2011)
(Al,ln,Ga)N-based photodetectors.: Some materials issues
Elias Munoz
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2007)
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
O Mitrofanov et al.
JOURNAL OF APPLIED PHYSICS (2004)
Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface
T Hashizume
JOURNAL OF APPLIED PHYSICS (2003)
III nitrides and UV detection
E Muñoz et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2001)