Journal
PHOTONICS RESEARCH
Volume 7, Issue 8, Pages B48-B54Publisher
OPTICAL SOC AMER
DOI: 10.1364/PRJ.7.000B48
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Funding
- National Key R&D Program of China [2017YFB0403000]
- National Natural Science Foundation of China (NSFC) [61774081, 91850112]
- Natural Science Foundation of Jiangsu Province [BK20161401]
- Fundamental Research Funds for the Central Universities [021014380085, 021014380093, 021014380098]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Science and Technology Project of State Grid Corporation of China [SGSDDK00KJJS1600071]
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In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 x 10(4), and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electric-field-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes. (C) 2019 Chinese Laser Press
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