Journal
ADVANCED ELECTRONIC MATERIALS
Volume 5, Issue 7, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201900235
Keywords
cellulose nanofibers; electric double layers; paper electronics; thin-film transistors
Funding
- National Science Foundation for Distinguished Young Scholars of China [61425020]
- National Natural Science Foundation of China [11674162]
- National Key R&D Program of China [2018FYA0305800]
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Flexible indium-tin-oxide (ITO)-based homojunction thin-film transistors (TFTs) are fabricated on cellulose-nanofiber-soaked paper substrates. The paper is simultaneously used as the gate dielectric and substrate. Source/drain electrodes and a channel layer are sputtered by one-step radio-frequency sputtering deposition. The paper exhibits a very large specific electric-double-layer capacitance of 2.3 mu F cm(-2) due to the existence of mobile protons. The flexible ITO-based TFTs can operate at a low voltage of 2.0 V and show a relatively high I-ON/I-OFF ratio of 7.5 x 10(6). Furthermore, no obvious electrical degradation is observed at various bending radii. Finally, inverter and NAND logic operation are demonstrated by the TFTs together with two in-plane gates. Such flexible homojunction TFTs on low-cost and biodegradable paper are promising for portable paper electronics.
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