Journal
ADVANCED ELECTRONIC MATERIALS
Volume 5, Issue 8, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201900438
Keywords
p-NiO; n-ZnO; pyro-phototronic effect; transparent electronics; ultrafast photodetectors
Funding
- Basic Science Research Program through Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry AMP
- Energy (MOTIE) of the Republic of Korea [KETEP-20173010012940]
- Incheon National University, Republic of Korea [2017-0371]
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A high-performance transparent p-NiO/n-ZnO heterojunction ultraviolet photodetector with a photovoltaic mode that exploits the pyro-phototronic effect is demonstrated. The influence of thermal treatment on ZnO films is systematically investigated, and is found to help speed up current flow due to redistribution of the pyroelectric potential within the heterojunction device. The pyrocurrent magnitude is enhanced by 1264.41% for the thermally treated device. In addition, under weak UV illumination (0.43 mW cm(-2)), the thermally treated device exhibits high responsivity and detectivity with respective enhancements over 5460% and 6063% compared to the pristine device. Importantly, an ultrafast response speed with rise time approximate to 3.92 and decay time approximate to 8.90 mu s is achieved under self-biased conditions. The device also maintains an impressive transparency of more than 70% in the visible region. Furthermore, the basic pyro-phototronic properties of the device are thoroughly probed based on the influence of incident light intensity, externally applied bias, and change in transient switching frequencies. This work not only introduces a simple approach but also enables high-performance self-powered UV photodetection governed by the pyro-phototronic effect and demonstrated to be suitable for future transparent optoelectronic devices.
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