Journal
MICROMACHINES
Volume 10, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/mi10070446
Keywords
bipolar resistive switching characteristics; annealing temperatures; solution-based dielectric; resistive random access memory (RRAM)
Categories
Funding
- National Natural Science Foundation of China [21503169, 2175011441, 61704111]
- Key Program Special Fund in XJTLU [KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07]
- British Council UKIERI project [IND/CONT/G/17-18/18]
- EPSRC [EP/M00662X/1] Funding Source: UKRI
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Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 degrees C to 300 degrees C, in increments of 25 degrees C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 degrees C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>10(4)), the narrowest resistance distribution, the longest retention time (>10(4) s) and the most endurance cycles (>150).
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