Journal
IEEE PHOTONICS JOURNAL
Volume 11, Issue 3, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2019.2910130
Keywords
CMOS; negative differential resistance (NDR); peak-to-valley current ratio (PVCR); photoelectric devices; optical switch
Funding
- National Key Research and Development Program of China [2017YFB0403603]
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To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 mu m CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 x 10(10)) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits.
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