Journal
THIN SOLID FILMS
Volume 679, Issue -, Pages 35-41Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2019.04.009
Keywords
Aluminum-doped zinc oxide; Transparent conductive materials; Reactive HiPIMS; High deposition rate
Categories
Funding
- Czech Ministry of Education, Youth and Sports under the program NPU I [LO1506]
- CENTEM projects (Czech Republic) [CZ.1.05/2.1.00/03.0088, PLUS LO1402]
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Reactive high-power impulse magnetron sputtering was used for high-rate (deposition rate of 60 nm/min) deposition of conductive (resistivity of 3 x 10(-3) Omega cm) and optically transparent (extinction coefficient at the wavelength of 550 nm of 0.01) ZnO:Al thin films at ambient temperature (< 40 degrees C). We used planar Zn:Al target (3.09 at.% of Al) with diameter of 100 mm and thickness of 6 mm mounted on strongly unbalanced magnetron. The films were deposited in argon-oxygen atmosphere at constant argon and oxygen partial pressure of 2.0 Pa and 0.1 Pa, respectively. An average target power and voltage pulse length were kept constant to 1.9 Wcm(-2) and 200 mu s, respectively. A pulse-averaged target power density was varied in the range of 190 Wcm(-2)-940 Wcm(-2). Optical emission spectroscopy was used for better understanding of correlations between plasma discharge properties and structural, electrical and optical properties of prepared films.
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