Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 195, Issue -, Pages 318-322Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2019.03.025
Keywords
Point contact; Back contact passivation; Ultrathin CIGSe solar cells; Transparent back contact; Nanosphere lithography
Funding
- Helmholtz-Association for Young Investigator groups within the Initiative and Networking fund [VH-NG-928]
- National Natural Science Foundation of China (NSFC) [51802240]
- China Scholarship Council
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Semi-transparent ultrathin Cu(In,Ga)Se-2 (CIGSe) solar cells offer many promising applications but their efficiencies are still limited. In this work, SiO2 point contact structures were prepared using nanosphere lithography on Sn:In2O3 (ITO) substrate and ultrathin CIGSe solar cells were fabricated on top. It was discovered that the SiO2 point contact structure at the CIGSe/ITO interface behaves significantly different from at the CIGSe/Mo interface and does not improve the rear interface reflectivity or short-circuit current density. However, the SiO2 point contact structure brings pronounced electrical benefits, arising from the joint effect of reduced back recombination and induced field effect by internal charges. Semi-transparent ultrathin CIGSe solar cells with an absorber thickness of 380 nm exhibited a significant increase in open circuit voltage of 26 mV and fill factor of 9.4% (absolute). Consequently, the efficiency is improved by 23% (from absolute 6.8%-8.4%).
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