4.7 Article

Photovoltaic properties of low-bandgap (0.7-0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 195, Issue -, Pages 198-203

Publisher

ELSEVIER
DOI: 10.1016/j.solmat.2019.02.030

Keywords

Dilute nitrides; Molecular beam epitaxy; GaInNAsSb; Multijunction solar cells

Funding

  1. European Research Council (ERC AdG AMETIST) [695116]
  2. European Research Council (ERC) [695116] Funding Source: European Research Council (ERC)

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We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, i.e. in the range of 5-8%, and bandgap energies close to 0.7 eV grown by molecular beam epitaxy. A good crystalline quality is demonstrated for the entire range of N concentrations. An average external quantum efficiency of 0.45 is demonstrated for GaInNAsSb solar cell with 6.2% N exhibiting a bandgap of 0.78 eV (no antireflection coatings has been applied). The internal quantum efficiency for the cell is 0.65 at E-g + 0.2 eV. The solar cells exhibited bandgap-voltage offsets between 0.55 V (for N = 5.3%) and 0.66 V (for N = 7.9%). When used in a six junction solar cell architecture under AM1.5D illumination, the estimated short-circuit current density corresponding to the 0.78 eV cell is 8.2 mA/cm(2). Furthermore, using the parameters obtained for the GaInNAsSb junction with 6.2% N, we have estimated that such six-junction solar cell architecture could realistically attain an efficiency of over 50% at 1000 suns concentration.

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