Journal
SEMICONDUCTORS
Volume 53, Issue 6, Pages 853-859Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782619060113
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Funding
- program 211 of the Government of the Russian Federation [02.A03.21.0006]
- Ministry of Science and Higher Education of the Russian Federation [AAAA-A16-116122810218-7]
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Highly adhesive tin-monoselenide (SnSe) layers (200 +/- 10) nm thick are grown by hydrochemical deposition from a trilonate reactive mixture. X-ray diffraction shows that the synthesized films crystallize in the orthorhombic system (space group Pnma). The significant oxygen content in the film surface layers is explained by the partial oxidation of samples with SnO2 phase formation. The results of ion etching to a depth of 18 nm show a sharp decrease in the oxygen content over thickness and real correspondence to the SnSe elemental composition. The band gap determined by optical studies for direct transitions is 1.69 eV. The synthesized SnSe layers exhibit p-type conductivity, which is characteristic of this material.
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