Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 13, Issue 10, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201900162
Keywords
charge-transfer salts; electrolyte gating; metal-like conduction; nonstoichiometric doping; uniaxial stress
Funding
- JSPS A3 Foresight Program
- JSPS KAKENHI [JP26102012, JP25000003, JP17H01069, JP19H00891]
- JST CREST [JPMJCR17I5]
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Heavily doped semiconductors are well investigated and widely used in inorganic electronics. However, controlled heavy doping of organic crystalline semiconductors is yet to be studied because of the lack of suitable methods. This article reports on doping by electrolyte gating combined with bandwidth control by uniaxial stress using a bilayered nonstoichiometric kappa-beta ''-type charge-transfer salt, in which the beta '' layer exhibits competition between metallic and chargeordered insulating states. A change from insulating-like to metal-like conduction with a positive temperature coefficient of resistance is induced by the simultaneous application of a negative gate voltage and compressive stress applied by bending the substrate. The simultaneous heavy doping and bandwidth-control technique presents a novel approach for investigating nonstoichiometric doping of organic semiconductors for novel electronic functions using metal-insulator transitions and superconductivity of correlated electron systems.
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