Effect of the impurity on the Aharonov-Bohm oscillations and the intraband absorption in GaAs/Ga1-xAlxAs quantum ring under intense THz laser field

The simultaneous effect of intense THz laser field and hydrogenic donor impurity on Aharonov-Bohm effect in a GaAs/Ga1-xAlxAs single quantum ring is investigated using the non-perturbative Floquet theory in high-frequency limit and Ehlotzky approximation. It is shown that the intense THz laser field and donor impurity destroy the usual Aharonov-Bohm oscillations of the electron ground state. The Aharonov-Bohm-like oscillations of the excited energy levels, as well as the dipole, allowed optical transition energies can be effectively controlled by changing the laser field parameter and impurity position. Furthermore, an unusual oscillatory behavior is also observed for the dependence of optical transition intensity on magnetic field induction. The obtained results indicate the possibility of the prediction and effective control of electronic and optical properties of future devices on quantum rings.