4.6 Article

A new benzothienoindole-based bipolar host material for efficient green phosphorescent organic light-emitting diodes with extremely small efficiency roll-off

Journal

ORGANIC ELECTRONICS
Volume 70, Issue -, Pages 211-218

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2019.04.006

Keywords

Organic light-emitting diodes (OLEDs); Green PhOLEDs; Bipolar host; Hole-transport unit; Efficiency roll-off

Funding

  1. Basic Science Research Program [2016M3A7B4909243, 2018R1D1A1B07048498]
  2. National Research Foundation (NRF) of Korea - Ministry of Science, ICT, and Future Planning

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In this contribution, two new hole-transport units, 10H-benzo[4,5]thieno[3,2-b]indole (BTI) and 10H-benzofuro [3,2-b]indole (BFI), were developed to design and synthesize bipolar host materials namely 10-(3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-10H-benzo [4,5]thieno [3,2-b]indole. (mBTITrz) and 10-(3-(4,6-diphenyl-1,3,5-triazin2-yl(phenyl)-10H-benzofuro [3,2-b)indole.(mBFITrz), for phosphorescent organic light-emitting diodes (PHOLEDs). The effect of heteroatoms in the hole-transport unit on the physicochemical and electroluminescence properties of the hosts were investigated in detail. Interestingly, the phosphorescence of the compounds was highly dependent on the hole-transport unit, because it originated from their local excited state ((LE)-L-3), which was attributed to the interrupted strong electronic communication between donor and acceptor units by meta-mode of conjugation on the phenyl linker. Consequently, the mBTITrz showed high triplet energy (E-T) of similar to 2.88 eV compared to its counterpart mBFITrz (E-T similar to 2.65 eV). Both compounds displayed marked thermal stability with high thermal decomposition temperatures of above 410 degrees C and glass-transition temperatures of above 103 degrees C. In addition, the single carrier device studies revealed a bipolar charge transporting character for the compounds. Furthermore, the compounds were evaluated as bipolar hosts for green PHOLEDs by employing Ir(ppy)(3 )dopant. The mBTITrz-hosted device demonstrated much better performance than did the mBFITrz-hosted device, with a maximum external quantum efficiency of 21.3% and maximum current efficiency of 76.0 cd/A. Notably, the mBTITrz-based device exhibited excellent efficacy stability with uncompromised efficiency roll-off at 1000 cd/m(2) and an extremely low efficiency roll-off of 3.2% at 5000 cd/m(2 )and 9.0% at 10,000 cd/m(2).

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