Journal
OPTICS LETTERS
Volume 44, Issue 15, Pages 3653-3656Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.44.003653
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Funding
- National Science Foundation (NSF) [1752295]
- Welch Foundation [AA-1956-20180324]
- China Scholarship Council (CSC)
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1752295] Funding Source: National Science Foundation
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A gate-tunable plasmonic optical filter incorporating a sub-wavelength patterned metal-insulator-metal metasurface heterostructure is proposed. An additional thin transparent conducting oxide (TCO) layer is embedded in the insulator layer to form a double metal-oxide-semiconductor configuration. Heavily n-doped indium tin oxide (ITO) is employed as the TCO material, whose optical property can be electrically tuned by the formation of a thin active epsilon-near-zero layer at the ITO-oxide interfaces. Full-wave electromagnetic simulations show that amplitude modulation and shift of transmission peak are achievable with 3-5 V applied bias, depending on the application. Moreover, the modulation strength and transmission peak shift increase with a thinner ITO layer. This work is an essential step toward a realization of next-generation compact photonic/plasmonic integrated devices. (c) 2019 Optical Society of America
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