Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 449, Issue -, Pages 49-53Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2019.04.008
Keywords
Gallium nitride; Ion implantation; Annealing; MISFETs; Mg
Categories
Funding
- MEXT Program for research and development of next generation semiconductor to realize energy-saving society
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A new activation annealing technology that can efficiently and uniformly heat the ion implanted transparent GaN substrates was developed. Annealing temperature was reduced by 80-50 degrees C Using the GaN substrates coated with the carbon film on the backside. The performance of ion implanted GaN MISFETs using the newly developed low temperature annealing method were also demonstrated.
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