Journal
NANOTECHNOLOGY
Volume 30, Issue 38, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab284c
Keywords
gallium sulfide; physical vapor deposition; Raman; XRD; XPS; SEM
Funding
- National Research Foundation of Korea (NRF) - Korean government [2016R1A2B4007367]
- Chung-Ang University Graduate Research Scholarship
- National Research Foundation of Korea [2016R1A2B4007367] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High quality gallium sulfide II (GaS) and gallium sulfide III (Ga2S3) thin films on SiO2/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.
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