Journal
NANO LETTERS
Volume 19, Issue 7, Pages 4567-4573Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01495
Keywords
Magnetic proximity effect; anomalous Hall effect; CrGeTe3; (BixSb1-x)(2)Te-3; magnetic topological insulator
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Funding
- center for Quantum Materials Synthesis (cQMS) - Gordon and Betty Moore Foundation's EPiQS initiative [GBMF6402]
- Rutgers University
- Gordon and Betty Moore Foundation's EPiQS initiative [GBMF4418]
- U.S. DOE Basic Energy Sciences, Materials Sciences and Engineering Division [DESC0012704]
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Quantum anomalous Hall effect (QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators (TIs) due to limitations inherent with the doping process. In an effort to boost the quantization temperature of QAHE, the magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BixSb1-x)(2)Te-3 (BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CrGeTe3 (CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical matches for magnetic insulator/TI proximity systems.
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