4.8 Article

Three-Dimensional Nanoconfinement Supports Verwey Transition in Fe3O4 Nanowire at 10 nm Length Scale

Journal

NANO LETTERS
Volume 19, Issue 8, Pages 5003-5010

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01222

Keywords

Fe3O4; intrinsic defect; nanoconfinement; Verwey transition; statistical model

Funding

  1. Department of Science and Technology, Government of India [SB/OS/PDF-084/2016-17]
  2. MEXT Elements Strategy Initiative to Form a Core Research Center from the Ministry of Education, Culture, Sports, Science and Technology (MEXT)
  3. Futaba Research Grant Program of the Futaba Electronics Memorial Foundation
  4. Nanotechnology Platform Project (Nanotechnology Open Facilities in Osaka University) of MEXT, Japan [F-16-OS-0012, F-16-OS-0016]
  5. [16H06011]
  6. [26246013]

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Herein, we construct three-dimensional (3D) Fe3O4 epitaxial nanowires at a 10 nm length scale on a 3D MgO nanotemplate using an original nanofabrication technique that mainly comprises nanoimprint lithography and inclined thin-film deposition. Despite the high density of inevitable nanoscale defects, the ultrasmall Fe3O4 nanowires exhibit a prominent Verwey transition at about 112 K with a maximum relative change in resistance of 9.5, which is 6 times larger than that of the thin-film configuration. Numerous measurements on a large number of Fe3O4 nanowires grown concurrently on the same 3D MgO nanotemplate reveal a dramatic difference in their electrical transport property with the presence/absence of the Verwey transition. A comparative study of Fe3O4 wires of increasing volume and a thin film reveals that a profound change in the Verwey transition is observed only for wires with a volume on the order of 10 nm(3). Moreover, a significant decrease in the sharpness of the resistance jump and the transition temperature of the Verwey response is noticed with an increasing volume of Fe3O4. This indicates the potency of the 3D nanofabrication technique in controlling nanoscale defects, which is further reconfirmed through magnetoresistance measurement. A feature of the magnetoresistance curve identifies the antiphase boundaries as a major source of defects. The occurrence of the smallest magnetoresistance in the ultrasmall nanowire with the highest Verwey transition temperature and resistance change ratio proves that 3D isotropic spatial confinement into a length scale comparable to the average spacing between two antiphase boundaries enables the favorable control over nanoscale defects. A simple statistical model satisfactorily illustrates the dependence of electrical transport properties on the volume of Fe3O4 from the macroscale down to the nanoscale. Finally, an ultrasmall nanowire with a low defect concentration allows the estimation of the true coherence length of the fundamental quasiparticle, the trimeron, responsible for the Verwey transition.

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