Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 97, Issue -, Pages 80-84Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.03.015
Keywords
GaN; Nanocrystalline materials; Epitaxial growth; Field-emission; Photo-detection
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Funding
- Council of Scientific and Industrial Research, India (CSIR)
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Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8-12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/mu m and a high emission current density of 2.22 mA/cm(2) (at 2.38 V/mu m) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.
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