Journal
MATERIALS LETTERS
Volume 247, Issue -, Pages 52-55Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2019.03.095
Keywords
Hexagonal boron nitride; Oxygen; Chemical vapor deposition; Thin films
Funding
- National Key RD program [2017YFF0206106]
- National Natural Science Foundation of China [51772317]
- Science and Technology Commission of Shanghai Municipality [16ZR1442700, 18511110700]
- Shanghai Rising-Star Program (A type) [18QA1404800]
- China Postdoctoral Science Foundation [2017M621563, 2018T110415]
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Hexagonal boron nitride (h-BN) has been expected as an ideal two dimensional (2D) dielectric for practical device applications. Here we demonstrate a promising technique to achieve large area and high quality h-BN thin films on iron boride (Fe2B) substrate by chemical vapor deposition (CVD). It was found that the remanent oxygen in reaction gas induces the oxidation of Fe2B alloy and yields low quality h-BN. Detailed characterizations prove the uniformity and high quality of as-grown h-BN thin films synthesised by gas purification process for removing oxygen. This facile method can be a scalable approach to synthesize large area and high quality h-BN thin films for future related electronic and optoelectric applications. (C) 2019 Elsevier B.V. All rights reserved.
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