Journal
APPLIED SURFACE SCIENCE
Volume 385, Issue -, Pages 1-8Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2016.05.041
Keywords
SiC; Femtosecond laser-matter interaction; Phase transition; Ablation
Categories
Funding
- Ministry of Education, Science and Technology of Korea through Basic Science Research Program [R15-2008-006-03001-00]
- IBS (Institute for Basic Science) [IBS-R012-D1]
- Gwangju Institute of Science and Technology through the Top Brand Project (TBP)
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We present a comprehensive study of morphological modification induced on and below the surface of n-type 4H-SiC by irradiation with femtosecond laser pulses under tight focusing condition. Spectroscopic investigation of local electronic and structural transformations in SiC-micro/nanostructures suggested bond breaking i.e. transformation of crystalline SiC to amorphous silicon (a-Si) and amorphous carbon (a-C). These observations were augmented by investigations applying atomic force microscopy (AFM), micro-photoluminescence (PL) spectroscopy, and high resolution X-ray diffraction (HRXRD). A high resolution cross-sectional study of laser-modified region with transmission electron microscope (TEM) showed a thin amorphous layer in the vicinity of the geometrical focus with deformations and stacking faults in the sub-surface area. Having considered the existing ablation theories, a complex interplay of fast laser heating followed by melting and rapid re-solidification as well as dynamic relaxation of the laser-induced stresses seems to be responsible for formation of the observed structural changes. (C) 2016 Elsevier B.V. All rights reserved.
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