Journal
LANGMUIR
Volume 35, Issue 30, Pages 9802-9808Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.langmuir.9b01000
Keywords
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Funding
- Scientific Grant Agency of the Slovak Republic [VEGA 2/0092/18, VEGA-1/0903/17]
- Research & Development Operational Program - ERDF [26240220088]
- [APVV-15-0641]
- [APVV-15-0693]
- [APVV-16-0319]
- [APVV-17-0560]
- [APVV SK-CN-RD-18-0006]
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Few-layer MoS2 films stay at the forefront of current research of two-dimensional materials. At present, continuous MoS2 films are prepared by chemical vapor deposition (CVD) techniques. Herein, we present a cost-effective fabrication of the large-area spatially uniform films of few-layer MoS2 flakes using a modified Langmuir-Schaefer technique. The compression of the liquid-phase exfoliated MoS2 flakes on the water subphase was used to form a continuous layer, which was subsequently transferred onto a submerged substrate by removing the subphase. After vacuum annealing, the electrical sheet resistance dropped to a level of 10 k Omega/sq, being highly competitive with that of CVD-deposited MoS2 nanosheet films. In addition, a consistent fabrication protocol of the large-area conductive MoS2 films was established. The morphology and electrical properties predetermine these films to advanced detecting, sensing, and catalytic applications. A large number of experimental techniques were used to characterize the exfoliated few-layer MoS2 flakes and to elucidate the formation of the few-layer MoS2 Langmuir film.
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