Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 39, Issue 15, Pages 4842-4849Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2019.06.044
Keywords
Thin films; Thermoelectric; Nanostructure; Layer inter-diffusion
Categories
Funding
- National Natural Science Foundation of China [11604212]
- Key platform and research projects, Education and Research of Guangdong Province [2015KQNCX139]
- Shenzhen Key Lab Fund [ZDSYS 20170228105421966]
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Ti-doped CoSb3 thin films were prepared through layer inter-diffusion method and the prepared thin films have unique architecture, containing nano-size grains. According to the Raman analysis, the films have weaker atomic vibration after Ti doping. This nano-structure and the weak atomic vibration can scatter a wide-range spectrum of phonons, resulting the significantly decrease of thermal conductivity. In addition, this material design also leads to a very important improvement of the absolute Seeback coefficient value, which increases from about 50 mu VK-1 to over 100 mu NK-1. As the result, the maximum ZT value is 0.86 at 523 K for a Ti doped sample, which is six times higher than the un-doped sample and is comparable to the best value for the CoSb3 based thin films. A flexible CoSb3 based thin film thermoelectric generator was also fabricated and shows that the response time of all the touch events is below 1 s.
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