Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 141, Issue 31, Pages 12322-12328Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.9b03639
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Funding
- Max Planck Society
- Helmholtz Association
- Deutscher Akademischer Austausch Dienst (DAAD)
- DFG [BR 4031/13-1, SFB 953, 182849149]
- Aufbruch Bayern initiative of the state of Bavaria (EnCN)
- Aufbruch Bayern initiative of the state of Bavaria (SFF)
- Bavarian Initiative Solar Technologies go Hybrid (SolTech)
- I-MEET in Erlangen-Nurnberg
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Effective, solution-processable designs of interfacial electron-transporting layers (ETLs) or hole-blocking layers are promising tools in modern electronic devices, e.g., to improve the performance, cost, and stability of perovskite-based solar cells. Herein, we introduce a facile synthetic route of thiazole-modified carbon nitride with 1.5 nm thick nanosheets which can be processed to a homogeneous, metal-free ETL for inverted perovskite solar cells. We show that thiazole-modified carbon nitride enables electronic interface enhancement via suppression of charge recombination, achieving 1.09 V in V-oc and a rise to 20.17 mA/cm(2) in J(sc). Hence, this report presents the successful implementation of a carbon-nitride-based structure to boost charge extraction from the perovskite absorber toward the electron transport layer in p-i-n devices.
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