Journal
APPLIED SURFACE SCIENCE
Volume 384, Issue -, Pages 353-359Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2016.05.078
Keywords
Light-emitting diode (LED); Gallium nitride LED; Selective laser lift-off; Adhesion; Micro-LED display
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Funding
- Korea Institute of Machinery and Materials (KIMM) [SC1170]
- National Research Council of Science & Technology (NST), Republic of Korea [SC1170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications. (C) 2016 Elsevier B.V. All rights reserved.
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