4.6 Article

Brightness improvement in a graphene inserted GaN/ZnO heterojunction light emitting diode

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 39, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab2bb3

Keywords

ZnO microrod; graphene; heat dissipation; ultraviolet light emitting diode

Funding

  1. National Key RAMP
  2. D Program of China [2017YFA0700503, 2018YFA0209101]
  3. NSFC [11734005, 61704024]
  4. Science and Technology Project of Jiangsu Province [BE2016177, BK20170696]
  5. Fundamental Research Funds for the Central Universities
  6. Scientific Research Foundation of Graduate School of Southeast University [YBJJ1771]

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Heat dissipation is a crucial issue for heterojunction light emitting diodes (LEDs) because the requirement of high brightness necessitates higher current densities that would trigger more joule heating. We demonstrate that the embedded graphene in a ZnO/MgO/GaN LED alleviates self-heating issues by virtue of its heat-spreading ability and improves the brightness of the device. The effect of graphene was studied by optical characteristics, energy band structure and thermal field simulation of the devices. The optimized device acts as an LED with ultraviolet emission at 397.4nm. Compared with the one without graphene, a 6.2-fold improvement in intensity and a 16.8 nm blue shift in central wavelength were obtained. The graphene induced heat sinking on the junction area was proposed to explain this optical improvement. Followed by thermal simulation, the joule heat related photoluminescence suppression of individual ZnO microrods further proves the mechanism.

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