Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 37, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab2abc
Keywords
Si nanowire; porous structure; photon-triggered transistor; logic gate; photodetector
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Funding
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2018R1A3A3000666, 2017R1A4A1015426]
- Institute for Information AMP
- Communications Technology Promotion (IITP) [2017-0-00575]
- National Research Foundation of Korea [2018R1A3A3000666, 2017R1A4A1015426] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Optical triggering for current generation in a single Si nanowire embedded with porous segments is studied to demonstrate photon-triggered transistors with a high on-off ratio. The formation of multiple localized porous Si structures in a nanowire and their uniform and sensitive responses to light enable practical implementation of photonic devices such as photon-triggered logic gates and high-resolution photodetectors. This review introduces the recent progress on the photon-triggered nanowire transistors. First, it describes two methods to synthesize porous Si segments in a nanowire and analysis of their structural properties. Second, the review describes the experimental and theoretical characterizations of photon-triggered nanowire transistors. Third, it introduces the design and implementation of logic gates, including AND, OR, and NAND, and multi-pixel photodetectors using a single Si nanowire with two or more porous Si segments. This review suggests that an effective integration of photon-triggered transistors in a single nanowire can serve as a versatile platform for new multifunctional optoelectronic devices.
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