Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 34, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab2ab9
Keywords
silicon surface passivation; silicon nitride; rapid thermal annealing; interface state densities; negatively fixed charges
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Funding
- National Natural Science Foundation of China [61604131]
- Natural Science Foundation of Zhejiang Province [LY19F040009]
- Science Challenge Project [TZ2016003-1]
- Visiting Scholar Foundation of State Key Lab of Silicon Materials [SKL2016-1]
- Scientific Research Foundation of Zhejiang Sci-Tech University [16062067-Y]
- National Undergraduate Training Program for Innovation [201710338011]
- Xinmiao Undergraduate Student Talents Program of Zhejiang Province [2017R406037]
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The effect of post-deposition rapid thermal annealing (RTA) on p-type Czochralski silicon surface passivation by plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride (SiNx) films has been investigated. The effective carrier lifetime is significantly improved after annealing at low temperature (400 degrees C-450 degrees C) for 15-30 s. This improvement is associated with a decrease of N-H and Si-H bond densities in SiNx films and, a resultant decreased density of states at the SiNx/Si interface. More importantly, the polarity of fixed charges is converted from positive to negative in the annealed SiNx films. It is demonstrated that a release of hydrogen atoms to the SiNx/Si interface combined with a tuning of charges during low-temperature RTA, is very beneficial for p-type silicon surface passivation.
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