4.6 Article

Characterization of MFe2O4 (M = Mg, Zn) Thin Films Prepared by Pulsed Laser Deposition for Photoelectrochennical Applications

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 123, Issue 30, Pages 18240-18247

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.9b04635

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Funding

  1. AiF within the program for promoting the Industrial Collective Research (IGF) of the German Federal Ministry of Economic Affairs and Energy (BMWi) [18904N1-5]
  2. German Research Foundation DFG [5392/7-1, SPP 1613, MA 5392/5-1]
  3. German Federal Ministry of Education and Research (BMBF) [03XP0093]

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Earth-abundant visible light-absorbing photoelectrodes of the spinel ferrites ZnFe2O4 and MgFe2O4 have been prepared as dense and crack free thin films using pulsed laser deposition, to investigate the basic electronic properties of these two emerging absorber materials. X-ray diffraction and Raman spectroscopy confirm the phase purity of the prepared thin films, whereas magnetotransport and Hall measurements in combination with Mott-Schottky and photoelectrochemical measurements were performed to reveal the performance-limiting factors of those absorbers for photoelectrochemical water oxidation. Our results provide new insights to improve the performance of ferrite-based photoelectrodes in the future.

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