4.6 Article

Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions

Journal

APPLIED PHYSICS LETTERS
Volume 108, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4939910

Keywords

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Funding

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2010-0024555, 2010-0020207, NRF-2013R1A1A2058744]
  2. Ministry of Trade, Industry and Energy [10052928]
  3. KIST [2E25430]
  4. Ministry of Science, ICT & Future Planning, Republic of Korea [2E25430] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  5. National Research Foundation of Korea [2010-0024555, 2013R1A1A2058744] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We report the tailoring of the electronic structure of poly(N-vinylcarbazole) (PVK) using a mixture layer of polyaniline: poly(p-styrenesulfonic acid) (PANI:PSS) in organic multilayer PVK/PANI: PSS/poly(3,4-ethylenedioxythiophene):PSS heterojunctions. The overall electronic structure of the PVK overlayer was systematically down-shifted while the work function of PANI: PSS increased as a function of the PSS-to-PANI weight ratio for the ratio range from 1 to 11 in the PANI: PSS film. The down-shift in the highest occupied molecular orbital of PVK markedly reduced the hole injection barrier from PVK to quantum-dot (QD) layers in QD-light emitting diode (QD-LED) structures, resulting in superior electrical and electroluminescent characteristics for QD-LEDs. The influences of PANI: PSS thickness on the electronic structure of PVK and the performance of QD-LEDs are also discussed. (C) 2016 AIP Publishing LLC.

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