Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4953461
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Funding
- Singapore National Research Foundation [NRF-CRP10-2012-02]
- Singapore National Research Foundation [NRF-CRP10-2012-02]
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Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FERS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories. Published by AIP Publishing.
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