Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4942372
Keywords
-
Categories
Ask authors/readers for more resources
We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al0.7In0.3As0.3Sb0.7, grown on GaSb. The bandgap energy and thus the cutoff wavelength are similar to silicon; however, since the bandgap of Al0.7In0.3As0.3Sb0.7 is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths. In addition, unlike other III-V avalanche photodiodes that operate in the visible or near infrared, the excess noise factor is comparable to or below that of silicon, with a k-value of approximately 0.015. Furthermore, the wide array of absorber regions compatible with GaSb substrates enable cutoff wavelengths ranging from 1 mu m to 12 mu m. (C) 2016 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available