Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941233
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Funding
- Japan Society for the Promotion of Science (JSPS) [26246013, 25286058]
- Grants-in-Aid for Scientific Research [26246013, 25286058, 15K13949] Funding Source: KAKEN
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We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation. (C) 2016 AIP Publishing LLC.
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