Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4959254
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- King Abdulaziz City for Science and Technology (KACST) [KACST TIC R2-FP-008]
- King Abdullah University of Science and Technology (KAUST) [BAS/1/1614-01-01]
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We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E-2g(1) and A(g)(1) modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 +/- 0.08 and 0.56 +/- 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices. (C) 2016 Author(s).
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