Related references
Note: Only part of the references are listed.Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction
Chendong Zhang et al.
NATURE COMMUNICATIONS (2016)
3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides
Yuzheng Guo et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors (vol 103, 053513, 2013)
Cheng Gong et al.
APPLIED PHYSICS LETTERS (2015)
Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
K. E. Aretouli et al.
APPLIED PHYSICS LETTERS (2015)
Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts
Y. Guo et al.
APPLIED PHYSICS LETTERS (2015)
Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
Filip A. Rasmussen et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2015)
Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates
P. Tsipas et al.
MICROELECTRONIC ENGINEERING (2015)
A subthermionic tunnel field-effect transistor with an atomically thin channel
Deblina Sarkar et al.
NATURE (2015)
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
Ming-Yang Li et al.
SCIENCE (2015)
Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
A. T. Hanbicki et al.
SOLID STATE COMMUNICATIONS (2015)
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Yu-Chuan Lin et al.
NATURE COMMUNICATIONS (2015)
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
Ming-Hui Chiu et al.
NATURE COMMUNICATIONS (2015)
Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
Saptarshi Das et al.
ACS NANO (2014)
Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking
Ming-Hui Chiu et al.
ACS NANO (2014)
Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals
Claudia Ruppert et al.
NANO LETTERS (2014)
The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces
Cheng Gong et al.
NANO LETTERS (2014)
Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes
Rui Cheng et al.
NANO LETTERS (2014)
Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors
Chunming Huang et al.
NATURE MATERIALS (2014)
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
Yongji Gong et al.
NATURE MATERIALS (2014)
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
Xidong Duan et al.
NATURE NANOTECHNOLOGY (2014)
Nature and evolution of the band-edge states in MoS2: From monolayer to bulk
J. E. Padilha et al.
PHYSICAL REVIEW B (2014)
Band alignment of semiconductors from density-functional theory and many-body perturbation theory
Yoyo Hinuma et al.
PHYSICAL REVIEW B (2014)
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Hui Fang et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2014)
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Jiahao Kang et al.
PHYSICAL REVIEW X (2014)
Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides
Yufeng Liang et al.
APPLIED PHYSICS LETTERS (2013)
Band offsets and heterostructures of two-dimensional semiconductors
Jun Kang et al.
APPLIED PHYSICS LETTERS (2013)
Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach
Hong Jiang
JOURNAL OF PHYSICAL CHEMISTRY C (2012)
Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles
Hannu-Pekka Komsa et al.
PHYSICAL REVIEW B (2012)
Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches
B. Hoeffling et al.
PHYSICAL REVIEW B (2012)
Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
Ashwin Ramasubramaniam
PHYSICAL REVIEW B (2012)
Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
Tawinan Cheiwchanchamnangij et al.
PHYSICAL REVIEW B (2012)
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu et al.
NATURE (2011)
Limits to doping in oxides
J. Robertson et al.
PHYSICAL REVIEW B (2011)
Screened exchange density functional applied to solids
Stewart J. Clark et al.
PHYSICAL REVIEW B (2010)
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan C. Seabaugh et al.
PROCEEDINGS OF THE IEEE (2010)
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
Stefan Grimme
JOURNAL OF COMPUTATIONAL CHEMISTRY (2006)
First principles methods using CASTEP
SJ Clark et al.
ZEITSCHRIFT FUR KRISTALLOGRAPHIE (2005)
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
CG Van de Walle et al.
NATURE (2003)
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
H Kroemer
REVIEWS OF MODERN PHYSICS (2001)
Tracing the valence band maximum during epitaxial growth of HfS2 on WSe2
C Kreis et al.
APPLIED SURFACE SCIENCE (2000)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Share Paper
